GaN4AP

Gallium nitride (GaN) is a wide-bandgap material that could take electronic performance to the next level. The pervasive use of GaN-based devices will enable the development of power electronic systems with energy losses close to zero in addition to lower volume/weight and systems cost. The EU-funded GaN4AP project plans to make GaN-based electronics the primary technology in devices for all power conversion systems. The project targets innovative power electronic systems and materials, and a new generation of vertical power devices. It plans to develop intelligent and integrated GaN solutions both in system-in-package and monolithic variances. The development of new power supply devices and circuits using GaN-based electronics is crucial for the competitiveness of EU industries.

Duration: 1 June 2021 - 31 May 2024